Abstract
In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.
Highlights
In the past decades, GaN-based ternary alloys have made significant progress in blue, green, and ultraviolet (UV) light emitting diodes (LEDs) and laser diodes (LDs) [1,2,3]
We reported AlInGaN/GaN heterostructure grown by metal organic chemical vapor deposition (MOCVD) with varying varying TMA flow rate
This was quaternary AlInGaN thin films shifted to the right side with increasing TMA flow rate
Summary
GaN-based ternary alloys have made significant progress in blue, green, and ultraviolet (UV) light emitting diodes (LEDs) and laser diodes (LDs) [1,2,3]. Despite the great progress that has been made, the commercial InGaN/GaN blue LEDs still suffered from some fundamental problems related to the basic material properties. Even though InGaN-based blue LEDs are less sensitive to crystalline quality because of the carrier localization effect induced by alloy composition fluctuation [4], the piezoelectric polarization effect induced by the strain between barrier and well has been considered as one of the reasons of efficiency droop effect [5,6]. In order to solve these problems in ternary InGaN- and AlGaN-based devices, several researchers have recently grown quaternary AlInGaN films [7,8]. AlInGaN attracts much attention as a candidate material for high efficiency
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