Abstract
We investigated the relationship between threading dislocation and current-voltage (I-V) characteristics of 3.3 kV 4H-SiC Schottky barrier diodes (SBDs). The crystal defects were observed using non-destructive methods. X-ray topography (XRT) and electron beam induced current (EBIC) were used to compare the current-voltage characteristics of fabricated SBDs with defects. The surface and process defects were found to be fatal to devices performance such as ideality factor and leakage current increased and the breakdown deterioration. However, the threading dislocations rarely affected forward I-V characteristics and blocking voltage of fabricated 3.3 kV SBDs. The leakage current of the SBDs with threading dislocations in active region was increased by 103 compared with those of the SBDs without defect.
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