Abstract
The occurrence of thermally-induced current instability in multi-emitter-finger heterojunction bipolar transistors (HBTs) is described. An equivalent thermal circuit is used to model the effect of thermal shunt on this current instability. It is shown that the thermal shunt is superior to the ballast resistor for improving power characteristics, without sacrificing microwave performance. An HBT implementing the thermal shunt technique has demonstrated a microwave power density of more than 10 mWspl mu/m/sub 2/ of emitter area.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
