The effect of thermal annealing on the layered structure of smectic liquid crystalline organic semiconductor on polyimide gate insulator and its OFET performance

Abstract

The electrical performance of organic field-effect transistors (OFETs) depends on the quality of thin-film organic semiconductors, which is significantly affected by solution-processing conditions and additional processes. We investigated the effects of post-thermal annealing on the thin-film morphologies of liquid crystalline organic semiconductors on polyimide gate insulator surface and the FET performances of the films. The active material selected for the OFETs was 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10), which shows a highly ordered smectic E (SmE) mesophase and polycrystalline thin films feature very high mobility. We aimed to produce well defined molecular orientation and crystal structure in thin-film Ph-BTBT-C10 on polyimide gate insulator not typical SiO2 gate insulator via thermal annealing process. Uniform bilayer- or monolayer-structured polycrystalline thin films were obtained on polymer gate insulator after thermal annealing at a SmE (over 148°C) and SmA (over 213°C) liquid crystalline phase temperature, respectively. The OFET using bilayer-structured thin film showed high performance with a mobility of 2.27cm2/Vs.