Abstract
For thin resistor film with low TCR (temperature coefficient of resistance) and high resistivity, we have fabricated thin films using the DC/RF magnetron sputtering of 51 wt%Ni-41 wt%Cr- 8 wt%Si alloy target and studied the effect of the process parameters on the electrical properties. Resistivity was 172 [/spl mu//spl Omega//spl middot/cm] and 209 [/spl mu//spl Omega//spl middot/cm] and TCR were -52 [ppm//spl deg/C] and -25 [ppm//spl deg/C] for RF and DC as a power source, respectively. The sheet resistance and TCR increase with increasing the substrate and annealing temperature. From these results, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameters and annealing of thin film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
