Abstract
High resistance, low temperature coefficient of resistance (TCR) thin-film resistors have been produced by rf sputtering from compound targets using the Cr–Si–B–SiO2/Al2O3 material system. After postdeposition annealing at 450–550 °C sheet resistances of 20 kΩ/sq and TCR<200 ppm/°C were obtained for films of 40 nm thickness. The effect of changes to the proportions of each component in the mixture was investigated and it was found possible to control resistance and TCR. X-ray photoelectron spectroscopic analysis showed a good correlation between the target and film compositions. X-ray diffraction investigation did not show any crystalline structure in the film either before or after thermal treatment.
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