Abstract
Fast dI / dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from one generation to the next. This study suggests a possible solution to deal with the snappiness of the body diode by controlling the pillar's ripple. Different superjunction devices having different ripples, are compared during the reverse conduction to understand the effect of the ripple on the reverse recovery characteristics and in particular on the body diode softness.
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