The effect of the interface reaction mode on chemical mechanical polishing

Abstract

Chemical mechanical polishing (CMP) slurries play an important role in the finishing processes of optical components. This paper studies the effect of the interface reaction mode on the polishing performance by comparing the solid–solid and solid–liquid reaction modes. The reason for the different polishing performances of the two reaction modes was elucidated. The results show that balance between the chemical and mechanical effects during CMP can be obtained with the solid–liquid reaction mode. In addition, the solid–liquid reaction mode promotes uniform material removal on the polishing interface. Consequently, micro-scratch generation is avoided, and a good surface finish is obtained with the solid–liquid reaction mode.