7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
https://doi.org/10.1088/0953-8984/21/6/064245
Copy DOIJournal: Journal of Physics: Condensed Matter | Publication Date: Jan 20, 2009 |
Citations: 8 |
We investigate and discuss the effects of interfacial oxidation on electronic structures and tunnel conductanceof the Co2MnSi/MgO/Co2MnSi(001) magnetic tunnel junction (MTJ) on the basis of first-principles calculations. It is found thatthe MnSi termination tends to be oxidized compared with the Co termination because ofthe relaxation of atomic positions in the MnSi-terminated interface. Furthermore, we foundthat the single oxide layer inserted on both sides of the junction greatly decreases thetunnel conductance of the MTJ in parallel magnetization. We concluded that therelaxation of the Mn atomic position in the oxidized junction reduces the coupling of theΔ1 statesbetween the Co2MnSi electrode and the MgO barrier and causes significant interfacial scattering of the majority-spin electronswith Δ1 symmetry at the oxidized layer.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.