The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells

Abstract

In this work, within the effective mass approximation we have performed a theoretical study of electronic states, the intersubband-related optical absorption coefficient and relative refractive index change properties in the GaAs-based double δ-doped quantum well under non-resonant intense laser field. By solving the Schrödinger equation in the laser-dressed confinement potential, we calculated eigenvalues and corresponding eigenfunctions as an intense laser parameter. We concluded that the separation between ground and first excited energy levels in the double δ-doped quantum well increases in energy by the increase of the laser field intensity and this effect leads to an optical blue-shift in intersubband transitions. Therefore a significant tunability of the optical transitions in double δ-doped quantum well can be achieved by modulating the intensity of the intense laser field.