Abstract
We report an experimental study of the electrical properties of the interface between the Al2O3 passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and the p-CdHgTe (xCdTe = 0.22) coating grown by molecular beam epitaxy via measuring the C–V characteristics of MIS structures. It has been established that, at an Al2O3 growth temperature of 200°C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80°C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al2O3 coating on CdHgTe lies in the range of 120–160°C.
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