Abstract
ABSTRACTThe intermixing of AlAs/GaAs superlattices has been investigated as a function of Si concentration following anneals in the range of 500 to 900 C. The superlattice samples were grown by molecular beam epitaxy(MBE) and the near surface layers were doped with silicon at concentrations of 2×10 to 5×1018 cm-3. Si and Al depth profiles were measured with secondary ion mass spectrometry (SIMS).The diffusion length and activation energy of Al as a function of silicon dopant concentration are derived from the SIMS data. In the temperature range studied an activation energy for the Al interdiffusion of -4eV is observed with the diffusion coefficients increasing rapidly with Si concentration.
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