Abstract
Semiconducting iron disilicide (β-FeSi2) has been studied as thermoelectric materials, ferromagnetic materials and also optoelectronic materials. Since β-FeSi2 was successfully fabricated on Si (100) substrate by pulsed laser deposition (PLD) and followed annealing, we investigated the structural properties and crystallographic orientation of the films by X-ray diffraction (XRD) analysis. And also the scanning electron microscopy (SEM) was used to determine the structural properties and surface images of the films. Typical XRD patterns of the films show that no other diffraction peak can be found except β-FeSi2 and Si. The SEM results show that the films are composed of well-distributed grains, in the range of 100 - 200 nm in diameter. Atomic force microscope (AFM) and Fourier transform infrared (FTIR) spectroscopy were also used to characterize the fabricated β-FeSi2 films. We can find the roughness of the films and want to get the optimum conditions for the preparation of β-FeSi2 films on Si (100) substrate by PLD.
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