The effect of surface stress on the reconstruction of the Si(111) surface

Abstract

Stress tensors and their influence on the reconstruction of Si(111) surfaces were calculated using a “statics” computer simulation technique based on a semi-empirical potential energy function. Analyses were aimed at investigating long-range stress interactions on ideal and defective Si(111) surfaces. Calculations indicate that the perfect Si(111) surface is under a large compressive stress. Formation of ledges and surface vacancies, in particular, were found to reduce this compressive stress.