Abstract
A suitable deposition method of CdS is necessary for the high performance CIGS(Cu(In0.7Ga0.3)Se2.2) solar cells. In this paper, CdS films were deposited onto glass substrates at the substrate temperture of 50°C、100°C、150°C by thermal evaporation, the effect of the temperature were presented. CdS film deposited at substrate temperture of 150°C was annealed at 150°C for 30min. All films were characterized for their morphology, structure and optical property using scanning electron microscope(SEM), X-ray diffractometer(XRD) and UV–VIS–IR transmittance respectively.The quantum efficiency of the fabricated solar cells with annealed CdS buffer layer was also enhanced at short wavelength. This new method leads to the improved performance of CIGS solar cells and also simplify the whole fabrication technology.
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