Abstract
Abstract The effect of a magnetic field on crystal quality and impurities was investigated in detail by growing LEC GaAs crystals under a strong magnetic field of up to 3000 Oe. The infrared absorption coefficient, α, at a wavelength of 1 μm, which is related to the native defect EL2, increased or decreased, depending on the melt composition, as the magnetic field strength increased from 1500 to 3000 Oe. When the arsenic mol fraction of the melt was 0.503, no significant change in α was obtained for the same increase in the magnetic field strength. It has been confirmed that the effective segregation coefficient of carbon in GaAs approaches unity and striations can be eliminated completely as the magnetic field becomes stronger. The homogeneity of both α and the resistivity in magnetic field applied LEC (MLEC) crystals was far superior to that of LEC crystals grown without a magnetic field.
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