Abstract
The Bi0.5Na0.5TiO3–BaTiO3–SrTiO3 (BNT–BT–ST) thin films were grown on the LaNiO3 buffered MgO, SrTiO3 and LaAlO3 single crystal substrates, respectively. A systematic stress change of the thin films was obtained. The effect of increasing tensile stress on phase transition temperature is attributed to the suppression of in-plane polarization. The tensile stress reduces the unit cell along electric field, remnant polarization and dielectric permittivity, while enhances the piezoelectric response in this study. The high strain level (0.25%) and piezoelectric coefficient (d33*=200pm/V) were obtained. These results suggest that the piezoelectric properties of BNT–BT–ST thin films can be adjusted by choosing different stress magnitude.
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