Abstract
The present investigation reports on the influence of high doping on the stress-strain curves of Si and Ge with 〈123〉 orientation. As it is known for undoped semiconductors, two stages of dynamical recovery are observed. In contrast to these materials, however, the first recovery stage can no longer be interpreted by a diffusion-controlled mechanism. Rather a behavior similar to that found for the stationary deformation of metal alloys at high stresses may be realized. Although this effect is still under discussion in the literature, it is assumed that it has to do with the influence of the solute on the dislocation sub-structure evolving in the steady-state regime of the deforming crystals. The second stage of dynamical recovery shows the same behavior as observed in the undoped semiconductors; it is interpreted by a cross-slip mechanism.
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