Abstract
(1-x)(Pb0.97La0.02)(Zr0.46Sn0.48Ti0.06)O3-xSiO2 ((1-x)PLZST-xSiO2, x = 0-0.025) thick film antiferroelectric ceramics were preapred by a traditional solid-state reaction method. The structure and dielectric properties related to the energy storage density in the (1-x)PLZST-xSiO2 system were investigated in detail. PLZST with 0.5%SiO2 content is superior to other SiO2 contents samples in terms of the structure, dielectric properties and phase transition modulation. The energy storage density reaches the maximum value of 1.66 J/cm3 accompanied by the energy efficiency of 86.92% in 0.995 PLZST-0.005SiO2. The results suggest that high energy storage density of PLZST system can be improved with phase transition modulation using SiO2.
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