The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

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A thin SiN x film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN x film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.