Abstract
With the prospect of shorter wavelength photolithography, the need has arisen for new resist materials that will work efficiently at wavelengths where conventional resists are optically opaque. Poly (methyl methacrylate‐co‐3‐oximino‐2‐butanone methacrylate) (P(M‐OM) (94:6)), a resist that absorbs in the 220–250 nm range, has been sensitized for both this and the 280–320 nm range (an area where the new Perkin Elmer Printer is capable of making exposures). Its inherent sensitivity can also be improved by the incorporation of methacrylonitrile. Sensitized P(M‐OM‐CN) has a sensitivity of 75 mJ/cm2and is capable of better than 1 μm resolution.
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