Abstract

Abstract TiNi thin films of thickness 800 A were obliquely deposited at different angles of θ [ θ = 0°, 30°, 45°, 60° and 75°] layer by layer under 5 × 10 −5 torr pressure by thermal evaporation onto the glass substrate at room temperature. A layer of selenium of thickness 110 A was coated on the TiNi thin films. It was found that the resistance of the TiNi thin films increases with deposition angle and with absorption of hydrogen. The selenium layer coated on TiNi thin film was found to produce a marked improvement in the properties of hydrogen storage and charging rate also becomes faster. The rate of hydrogen absorption increases with temperature at lower range, but at higher range of temperature absorption of hydrogen decreases at 1 atm hydrogen pressure.

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