Abstract
FeTi thin films of thickness of 730 Å were obliquely deposited at different deposition angles θ ( θ = 0°, 30°, 45°, 60° and 75°) under 5 × 10 −5 torr pressure by thermal evaporation onto the glass substrate at room temperature. A layer of sulfur of thickness 115 Å was deposited on the FeTi thin film. It was found that the resistance of the FeTi thin films increases with deposition angle and with the absorption of hydrogen, and decreases with desorption. The sulfur layer on the FeTi thin film was found to produce a marked improvement in the properties of thin films for hydrogen storage, and charging and discharging rate becomes faster in comparison to FeTi thin films.
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