Abstract
The gas sensing characteristics of several favorable metal oxide semiconductors, such as ZnO, In2O3, SnO2, and WO3, under various irradiation conditions, utilizing ultraviolet light emitting diodes (UV-LED), were investigated. The morphology and structure of sensing materials prepared by precipitation route were analyzed, and the sensors’ performances were evaluated against low concentrations of NO2. In particular, the effects of several UV source-related operating parameters, such as irradiation wavelength, irradiance, and irradiation pattern, were studied, and the underlying mechanism for the adsorption/desorption kinetics of gas molecules under different UV irradiation was demonstrated. The effect of radiation specifications was found to play an essential role in the response of the sensors. Thus, appropriate conditions must be applied to the design and operation of the UV-LED activated gas sensors for optimal performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Photochemistry and Photobiology A: Chemistry
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
