Abstract
Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi 2O 3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi 2O 3-doped) interfacial layer on the main electrical parameters such as the ideality factor ( n), zero-bias barrier height ( Φ B0), series resistance ( R s) and interface-state density ( N ss). Electrical parameters of these two diodes were calculated from the current–voltage ( I– V) characteristics and compared with each other. The values of Φ B0, n and R s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Ω, respectively. The values of Φ B0, n and R s for SBDs with PVA (Bi 2O 3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Ω, respectively. For two SBDs, the energy density distribution profiles of interface states ( N ss) were obtained from forward-bias I– V measurements by taking the bias dependence of R s of these devices into account. The values of N ss obtained for the SBD with PVA (Bi 2O 3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer.
Published Version
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