Abstract
Influence of proton implantation for anodization of silicon in hydrofluoric acid has been investigated. This porous silicon can be used to form isolation layers for bipolar integrated circuits. Both p-and n-type silicon were used for the evaluation of proton implantation effects. Most implantations were carried out with 60–150 KeV beam of protons, at a total dose of 1013–1016/cm2 and at room temperature. In the case of implantation in n-type silicon, enhancement in anodization was observed at proton doses ranging from 1015 to 1016/cm2, i.e., the implanted region was converted into porous silicon, while the unimplanted region remained unchanged. On the other hand, in p-type samples, anodization was observed in the implanted region. The mechanism of this phenomenon was investigated by heat treatment after proton implantation.
Published Version
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