Abstract
We have studied photoluminescence in two CdTe/ Cd 1− x Mn x Te multiple quantum-well samples with well thicknesses from 9.7 Å to 100 Å and with barrier compositions x = 0.5 and x = 0.68. The following effects have been observed after hydrostatic pressure up to 3 GPa was applied: (i) decrease of the luminescence intensity from wider wells, which can be related to the stress-induced deterioration of initially strained CdTe layers; (ii) transfer of photoexcited electrons from thinner wells into the barriers where Mn-related recombination occurs; (iii) large negative pressure coefficient (≈ −80 meV/GPa) of the Mn-related photoluminescence; (iv) positive pressure coefficients for CdTe well luminescence, which do not practically depend on the well thickness, while their magnitude decreases with increasing Mn concentration in the barriers (75 meV/GPa for Cd 0.50Mn 0.50Te and 60 meV/GPa for Cd 0.32Mn 0.68Te).
Published Version
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