Abstract
To investigate the effects of precursor ligands, metallic ruthenium films were deposited by metallorganic chemical vapor deposition (MOCVD) from three different divalent precursors, bis(2,4-dimethylpentadienyl)ruthenium [Ru(DMPD) 2 ; bis-open ruthenocene type], (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp); half-open ruthenocene type], and bis(ethylcyclopentadienyl)ruthenium [Ru(Etcp) 2 ; ruthenocene type]. Their activation energies and the deposition amounts at 400°C were 1.27, 1.68, and 2.32 eV and 1.9, 2.3, and 0.22 μmol/cm 2 h, respectively. The X-ray diffraction patterns indicated that the films prepared from Ru(DMPD) 2 were preferentially oriented to (001), whereas the films from Ru(EtCp) 2 and Ru(DMPD) (EtCp) showed random orientations. The resistivity of the films suggested that thinner films with lower resistivity could be deposited using Ru(DMPD) 2 .
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