Abstract
A study was conducted on potential fluctuations using the photoluminescence (PL) technique with temperature and excitation intensity variations, in a sample containing InGaAs∕InGaAlAs coupled double quantum wells, with spikes of InGaAlAs of different thicknesses, and a single quantum well as the control. With the inclusion of a spike at the center of the well, an increase in the magnitude of the potential fluctuation occurs, in relation to the control well, due to an increase in the contribution from both the interface roughness and the compositional disorders to the potential fluctuations. The enhancement of the effects of the potential fluctuations, such as the PL linewidth and the blueshift of the PL peak energy with the temperature, as the spike thickness increases, was attributed to the increase in the contribution from the alloy composition fluctuation to the potential fluctuation, caused by an increase in the interaction of the wave function with the central and lateral barriers. This study also discusses the strong influence of the excitation intensity on the variation of the emission energy with temperature.
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