Abstract
The effects of an electric field on the interband transitions in CdxZn1−xTe/ZnTe coupled double quantum wells have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements have been performed to investigate the excitonic transitions in CdxZn1−xTe/ZnTe coupled double quantum wells. Transmission electron microscopy images show that a 35-Å Cd0.18Zn0.82Te quantum well and a 50-Å Cd0.18Zn0.82Te quantum well are separated by a 35-Å Cd0.1Zn0.9Te potential barrier. PL spectra at 300 K show the excitonic transitions. When an electric field is applied to a coupled double quantum well, the Stark shift of the interband transition energy in the CdxZn1−xTe/ZnTe coupled double quantum wells is much more sensitive to the applied electric field than that of the Cd0.1Zn0.9Te/ZnTe single quantum wells. The electronic subband energies and energy wave functions in the quantum wells are calculated by an envelope function approximation, which takes into account the strain effects. These results indicate that CdxZn1−xTe/ZnTe coupled double quantum wells hold promise for potential applications in optoelectronic devices, such as new types of modulators and tunable lasers.
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