Abstract
The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
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https://doi.org/10.4028/www.scientific.net/msf.105-110.1491
Journal: Materials Science Forum | Publication Date: Jan 1, 1992 |
The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
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