Abstract
AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.
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