Influence of Ge content on formation of radiation defects in Si 1−xGe x solid solutions

Abstract

The process of radiation defect formation in bulk Si 1− x Ge x alloy was investigated taking into account the dependence of introduction rates of primary radiation defects on the content of Ge and intensity of irradiation. A new expression was obtained which describes the dependence of divacancy concentration in Si 1− x Ge x alloy at various introduction rates of primary radiation defects under electron, thermal and fast neutron irradiation.