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Abstract
Interstitial oxygen present in solution, as detected by the 9 μ absorption band, increases the Hall mobility of electrons in n-type silicon crystals but decreases the Hall mobility of holes in p-type. These results are explained by the lattice strain produced via dissolved interstitial oxygen impurities. Results on samples saturated with oxygen and heat treated to cause precipitation of SiO 2 in the temperature range of 950–1250°C show that the SiO 2 particles decrease the values of Hall mobility compared to the initial values on samples without precipitates. Re-annealing causes the dissolution of the precipitates and recovery nearly to the initial values of the Hall coefficient.
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