Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy

Abstract

Abstract Silicon- and beryllium-doped Ga0.52In0.48P and (Al0.7Ga0.3)0.52In0.48P were grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell. The electrical properties were investigated using van der Pauw–Hall and capacitance–voltage measurements at room temperature. The highest electron concentration obtained was 6.9×1018 and 2.1×1018 cm−3 for Silicon doped Ga0.52In0.48P and (Al0.7Ga0.3)0.52In0.48P, respectively. The highest hole concentration obtained was 1.1×1019 and 4.9×1018 cm−3 for beryllium-doped Ga0.52In0.48P and (Al0.7-Ga0.3)0.52In0.48P, respectively. The Hall electron mobilities of Si-Ga0.52In0.48P and Si-(Al0.7Ga0.3)0.52In0.48P within the carrier concentration range of 1017