The effect of oxide layer vacancies on switching behavior in oxide resistive devices

Abstract

A high on/off ratio in oxide resistive devices is preferable for use in memory storage, especially when multibit operations are possible. Here, we demonstrate the effect of vacancy density on resistance by using three different Pt-copper oxide-W devices with different vacancy densities in the oxide layer. We show that a higher vacancy density in the oxide layer can enhance the on/off resistance ratio and demonstrate the advantage of this ratio in the realization of multi-bit operation. Finally, we successfully explain the impact of the vacancy density in the oxide layer using a simple model.