Abstract
Dopant contrast in the scanning electron microscope (SEM) has the potential to provide rapid and quantitative information about the distribution of dopant atoms in semiconductors providing that a robust quantification procedure can be developed. When silicon is exposed to air, it rapidly forms a native oxide on its surface which inevitably affects dopant contrast. In this paper we compare the dopant contrast observed on an in-situ cleaved specimen and an air-cleaved specimen and further examine the influence of prolonged electron exposure on dopant contrast.
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