Abstract
We have studied the effect of optically-induced random, anisotropic disorder on the magnetoresistance of a Al 0.3Ga 0.7As/ GaAs two-dimensional electron system by exposing the heterojunction to an asymmetric laser speckle pattern. Changes in the amplitude of the Shubnikov–de Haas oscillations can be explained in terms of easy and hard conductivity paths parallel and perpendicular to the long axis of the oval speckle grains. We also observe corresponding changes in the electron scattering rates.
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