Abstract
The binding energy of a hydrogenic impurity is calculated in a Ga 1− x Al x As/Ga 1− y Al y As corrugated quantum well within the single band effective mass approximation for different Al concentration. Binding energy of the ground state and the excited state of a donor is calculated, with the inclusion of 2D Hartree dielectric screening function. The effect of nonparabolicity of the conduction band is considered through the energy dependent effective mass. The effect of nonparabolicity on spin–orbit interaction energy is found. The oscillator strength coupling between the ground state and the excited state is calculated. The dependence of the donor binding energy on the well width and the Al-concentration is discussed. These results are discussed with the available data in the literature.
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