Abstract

We present a variational method to compute the binding energies of helium-like impurities in finite parabolic GaAs- Ga1−xAlxAs quantum wells. The effects of band nonparabolicity in the conduction band are taken into account within the effective mass approximation. The dependence of the impurity binding energy on the applied electric field and the impurity position is also discussed together with the polarization effect for all cases.

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