The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices

Mingyu Li,Zengjun Chen,Ayayi C. Ahyi,Leonard C. Feldman,John Rozen,Xingguang Zhu,John R. Williams

doi:10.1016/j.sse.2010.12.002

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices

Mingyu Li, Zengjun Chen

https://doi.org/10.1016/j.sse.2010.12.002

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Journal: Solid-State Electronics	Publication Date: Jan 3, 2011
Citations: 28

Affiliation: Auburn University, Vanderbilt University, Advanced Materials and Devices (United States), Rutgers, The State University of New Jersey

#Introduction Of Nitrogen #Interface Trap Density + Show 8 more

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Abstract

Abstract We report results on the introduction of nitrogen at the SiC/SiO2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an ‘NO-like’ mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.

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