The Effect of NH[sub 3] Plasma Treatment on the Electroless Copper Deposition on TaN[sub x] (x = 0=1) Diffusion Barriers

Abstract

The effect of NH 3 plasma treatment of the surface of the TaN x barrier films on electroless copper deposition on TaN x films was investigated to enhance the quality of electroless Cu with the low electrical resistivity of TaN x barrier films. Electrical resistivities of TaN x barrier films were increased by less than 10% by plasma treatment. Auger electron spectroscopy depth profiles results showed that only a small fraction of the TaN x layer depth was affected by the plasma treatment. Field-emission scanning electron microscope micrographs of palladium activated TaN x films showed the number density of palladium nuclei on TaN x barriers was remarkably increased by the NH 3 plasma treatment. Electroless copper deposition on TaN x barriers was improved significantly by the NH 3 plasma treatment without a large increase in electrical resistivity.