Changes in electrical resistivity during isothermal annealing of thermally disordered Cu-15at.%Pd alloys

Abstract

The changes in the electrical resistivity of thermally disordered Cu-15at.%Pd alloys during isothermal annealing at various temperatures has been investigated. The results obtained are compared with the changes in electrical resistivity calculated under the assumption that ordering proceeds only during isothermal annealing. The electrical resistivity in this alloy first increases and then decreases during isothermal annealing, and the magnitude of the increase decreases as the annealing temperature is lowered. A comparison between the results of measurement and calculation shows that the increase in electrical resistivity is considerably larger than that deduced at the early stage of ordering and occurs after the start of the ordering. An electron micrograph of a sample annealed at 643K for 42000s (11.7h) revealed that not only swirl-like antiphase domains but also fine domains with narrow stripes are present. Furthermore, it is shown that the electron diffraction pattern from the fine domains includes somewhat diffuse extra spots, which have never been observed in the L1 2 -type ordered structure, and that the fine domains disappear after a long anneal. These results indicate that the formation and disappearance of any quasistable phase influence the large increase and subsequent decrease in electrical resistivity during isothermal annealing.