Abstract
The effect of NH 3 plasma treatment of the surface of the TaN x barrier films on electroless copper deposition on TaN x films was investigated to enhance the quality of electroless Cu with the low electrical resistivity of TaN x barrier films. Electrical resistivities of TaN x barrier films were increased by less than 10% by plasma treatment. Auger electron spectroscopy depth profiles results showed that only a small fraction of the TaN x layer depth was affected by the plasma treatment. Field-emission scanning electron microscope micrographs of palladium activated TaN x films showed the number density of palladium nuclei on TaN x barriers was remarkably increased by the NH 3 plasma treatment. Electroless copper deposition on TaN x barriers was improved significantly by the NH 3 plasma treatment without a large increase in electrical resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
