The Effect of Modified PVA Interfacial Layer Doped by Zn Nanoparticles on the Electrical Parameters of Au/N-4H Sic (MS) Structures

Lapa HE,Kokce A,Al-Dharob MH,Ozdemir AF,AltA ndal S

doi:10.4172/2471-9935.100030

Abstract

Both Au/n-4H SiC (MS) and Au/(Zn doped-PVA)/n-4H SiC (MPS) structures were fabricated by using the same wafer. This effect of modified PVA interlayer doped by Zn nanoparticles on main electrical parameters, such as ideality factor (n), barrier height (BH), series resistance (Rs), and rectification rate (RR) were evaluated and investigated by using the current-voltage (I-V) data measurements. Furthermore, the energy dependent profile of surface states (Nss) was also obtained from these data by taking into account voltage dependent BH and n. The sources of observed negative capacitance (NC) at the accumulation region for the MS and MPS structures were also evaluated. From capacitance-voltage (C-V) and conductancevoltage (G/ω-V) data measurements, the profile of Rs and Nss were also evaluated and investigated as voltage dependent at high frequency (1 MHz) by using Nicollian-Brews technique. These results explain how is the effect of modified PVA interfacial layer doped by Zn nanoparticles on increasing in the RR and decreasing of the values of Rs, Nss, and leakage current of MPS structure as compared with MS structure. Thus, we can say that this increase in the performance of the MPS structure is a result of the grown of the (Zn-doped PVA) layer between Au and n-4H SiC.

Highlights

Many of experimental researches and studies for the metal-polymer-semiconductor (MPS) type structures in order to replacing the traditional metal-semiconductor (MS) structures with and without insulation interfacial layer such as SiO2 or SnO2 [1,2,3,4,5,6,7]
How the effect of modified PVA interfacial layer doped by Zn nanoparticles on the electrical parameters was evaluated and investigate after fabrication of both Au/n-4H silicon carbide (SiC) (MS) and Au/(Zn-doped PVA)/n-4H SiC (MPS) structures with the same substrate -4H SiC wafer
The main important electrical parameters are obtained from forward and reverse investigated by using the current-voltage (I-V), C-V and G/ω-V characteristics at room temperature to compare of them. These results show that the main electrical parameters of these MS and MPS structures are considerably dependent on voltage as well as interfacial layer

Summary

Introduction

Many of experimental researches and studies for the metal-polymer-semiconductor (MPS) type structures in order to replacing the traditional metal-semiconductor (MS) structures with and without insulation interfacial layer such as SiO2 or SnO2 [1,2,3,4,5,6,7]. The experimental result give us a good indicate about how is the effect of modified PVA interfacial layer doped by Zn nanoparticles on electrical properties and conduction/transport mechanism, after we fabricate Au/n-SiC (MS) and Au/ (Zn-PVA)/n-4H SiC (MPS) structures, we calculate and investigate the main electrical parameters for both structures to compare between them by using the forward and reverse bias I-V, C-V and G/ω-V measurements at room temperature.

Results

Conclusion