Abstract

Weft knitted conductive fabrics can act as excellent textile strain sensors for human motion capture. The loop architecture dictates the overall electrical properties of weft knit strain sensors. Therefore, research into loop architecture is relevant for comprehensively investigating the design space of e-textile sensors. There are three main types of knit stitches, Knitted loop stitch, Miss stitch, and Tuck stitch. Nevertheless, most of the research into weft knit strain sensors has largely focused on fabrics with only knitted loop stitches. Miss and tuck stitches will affect the contact points in the sensor and, consequently, its piezoresistivity. Therefore, this paper investigates the impact of incorporating miss and tuck stitches on the piezoresistivity of a weft knit sensor. Particularly, the electromechanical models of a miss stitch and a tuck stitch in a weft knit sensor are proposed. These models were used in order to develop loop configurations of sensors that consist of various percentages of miss or tuck stitches. Subsequently, the developed loop configurations were simulated while using LTspice and MATLAB software; and, verified experimentally through a tensile test. The experimental results closely agree with the simulated results. Furthermore, the results reveal that increases in the percentage of tuck or miss stitches in weft knit sensor decrease the initial and average resistance of the sensor. In addition, it was observed that, although the piezoresistivity of a sensor with tuck or miss stitches is best characterised as a quadratic polynomial, increases in the percentage of tuck stitches in the sensor increase the linearity of the sensor’s piezoresistivity.

Highlights

  • In the last decade, the application of knit fabrics has expanded from the traditional textile applications to their use in the creation of wearable electronics

  • We have proposed two electromechanical models depicting a miss stitch and a tuck stitch in weft knit sensors

  • We expanded these models in order to simulate various loop configurations consisting of varying percentages of tuck or miss stitches in a weft knit sensor

Read more

Summary

Introduction

The application of knit fabrics has expanded from the traditional textile applications to their use in the creation of wearable electronics. From the use of warp knit to create textile antennas to the use of weft knit to create strain sensors, the application of knitting to create conventional electronics is being rapidly adopted [1,2,3,4,5,6]. Conductive weft knitted fabrics have been utilised as strain sensors, because of their elastic structure and piezoresistivity [7,8,9,10,11]. Atalay et al intensively studied the impact of knitting parameters on a weft knit sensor’s piezoresistivity [12,13]. The sensors were created by knitting double covered elastomeric and silver-coated conductive nylon yarns in an interlock knit. Courses of the conductive nylon yarns were embedded on a host fabric. The host fabric was knitted in an interlock structure with elastomeric yarn

Objectives
Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call