Abstract
We fabricated and characterized the performance and stability of metal indium oxide (XIO, X = Zn, Ga, and Al) thin film transistors (TFTs) by an aqueous route with 350°C annealing. The optimized XIO TFTs exhibited good electrical performance. The bias stability of the optimized oxide TFTs was evaluated and we concluded that the instability of the oxide TFT is due to a charge trapping phenomenon. The combinational study of bias stability and chemical composition, which was characterized using X-ray photoelectron spectroscopy analysis, indicates that the hole and electron trapping are due to the metal hydroxide and oxygen vacancy species, respectively. In addition, it was found that the stability of the TFT is strongly related to the oxygen vacancy and hydroxide group.
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