Abstract
The degradation of insulating films and GaAs substrates by exposure to low pressure plasma is investigated. In Si–SiO2 structures, the increased density of fast surface states and the nonuniform storage of positive trapped charges within the oxide layer is responsible for the degradation of MOS devices exposed to low pressure plasma. The charge carrier reduction due to the creation of compensating defects during the hydrogen plasma treatment of n-GaAs is reported.
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