Abstract
AbstractThe properties of CdSe real surfaces were determined by measuring the C-V characteristics of MIS capacitors formed by vacuum deposition of SiO on different faces of CdSe crystals. The total charge in the surface states at flat band was obtained from measurements of the flat band voltage for various insulator thicknesses on the basal and cleavage planes. The separation of the fast and slow states and the energy distribution of the fast states on the two crystal faces was determined from the displacement of the experimental from the theoretical curves as the Fermi level was swept through the forbidden gap. The density of fast surface states (acceptor type) is not large enough to cause pinning of the Fermi level observed in Schottky barrier diode experiments. Apparently the oxide reduces the surface state density on CdSe below that obtained on an uncoated surface.
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