Abstract
Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si–Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.
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